BF471 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BF471 Datasheet PDF : 3 Pages
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NPN high-voltage transistors
BF469; BF471
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
Ic
ICM
IBM
Plot
Tstg
Tj
'amb
collector-base voltage
BF469
BF471
collector-emitter voltage
BF469
BF471
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb<114°C
MIN. MAX. UNIT
_
250 V
300 V
-
250 V
300 V
-
5
V
-
[50
mA
-
100 mA
-
50
mA
-
1.8
W
-65 +150 °C
-
150 °C
-65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
in free air; note 1
thermal resistance from junction to mounting base
100
K/W
20
K/W
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for collector lead
minimum 10 x 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VcEsat
Cre
fr
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150 °C
lc = 0; VEB = 5 V
lc = 25 mA; VCE = 20 V
lc = 30 mA; IB = 5 mA
lc = "c = 0; VCE = 30 V; f = 1 MHz
lc = 10 mA; VCE = 10 V; f = 100 MHz
MIN.
-
-
-
50
-
-
60
MAX.
10
10
50
-
0,6
1.8
-
UNIT
nA
uA
nA
V
PF
MHz
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