MPSA92 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
MPSA92 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistor
Product specification
MPSA92
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
IE = 0; VCB = −200 V
IC = 0; VBE = −3 V
VCE = −10 V; note 1
IC = −1 mA
IC = −10 mA
IC = −30 mA
IC = −20 mA; IB = −2 mA; note 1
IC = −20 mA; IB = −2 mA; note 1
IE =ie = 0; VCB = −20 V; f = 1 MHz
IC = −10 mA; VCE = −20 V;
f = 100 MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
VALUE
200
UNIT
K/W
MIN.
−
−
MAX.
−250
−100
UNIT
nA
nA
25
−
40
−
25
−
−
−500 mV
−
−900 mV
−
6
pF
50
−
MHz
1999 Apr 27
3
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