D44T2 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

D44T2

NPN POWER TRANSISTORS

New Jersey Semiconductor 

electrical Characteristics (Tc= 25° C) (unless otherwise specified)

CHARACTERISTIC

SYMBOL WIN

TYP

MAX

off characteristics'1*

Collector-Emitter Breakdown Voltage

(lc = 10MA)

Collector Cutoff Current

(VCE = Rated VECS)

Emitter Cutoff Current

(VEB = 5V)

D44T1,2 BVcES

300

—

—

D44T3.4

400

ICES

—

—

10

IEBO

—

—

10

second breakdown

Second Breakdown with Base Forward Biased

FBSOA

SEE FIGURE 5

on characteristics'1'

DC Current Gain

(IC = 500mA, VCE = 10V)

(IC = 50mA, VCE = 10V)

(lc = 500mA, VCE = 10V)

( IC = 50mA, VCE = 10V)

Collector-Emitter Saturation Voltage

(lc = 500mA, IB = 50mA)

D44T1 ,3

hFE

30

40

—

D44T2.4

75

175

40

vCE(sat)

—

—

1.0

Base Emitter Saturation Voltage

(IC = 500mA, IB = 50mA)

dynamic characteristics

Collector Capacitance

(VCB= 10V, f = 1 MHz)

Current Gain — Bandwidth Product

(lc = 100mA, VCE = 10V, ftest = 1-0 MHz))

VBE(sat)

—

—

1.2

Ccb

—

25

—

fr

—

45

—

switching characteristics

Resistive Load

Delay Time + Rise Time

lc = 500mA, IBI = \B2 = 50mA td + tr

—

0.2

Storage Time

Vcc = 50V, tp = 25Msec

ts

—

3.3

—

Fall Time

tf

—

0.6

—

(1) Pulse Test: Pulse Width - 300^5 Duty Cycle < 2%.

UNIT

Volts

MA

MA

V

V

PF

MHz

MS

400

.04 .06 .08 .1

.2

.4

Ic - COLLECTOR CURRENT - AMPS

FIG. 1 TYPICAL hFE VS.lc

FIG. 2

-

.04 .06 .08 .I

.2

.4 .6 .8

Ic - COLLECTOR CURRENT - AMPS

TYPICAL SATURATION VOLTAGE

CHARACTERISTICS

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