BC847BV View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BC847BV Datasheet PDF : 8 Pages
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NXP Semiconductors
NPN general purpose double transistor
Product data sheet
BC847BV
Graphical information BC847BV
600
handbook, halfpage
hFE
(1)
500
MHB971
400
(2)
300
200
(3)
100
010−1
1
10
102
103
IC (mA)
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3 DC current gain; typical values.
1200
handbVoBokE, halfpage
(mV)
1000
MHB972
800
(1)
600
(2)
400
(3)
200
010−2
10−1
1
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
103
IC (mA)
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
104
handbook, halfpage
VCEsat
(mV)
103
MHB973
102
1100−1
(1)
(2)
(3)
1
10
102
103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.5 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
haVndBbEosoak,thalfpage
(mV)
1000
(1)
800
(2)
600
(3)
400
MHB974
200
0
10−1
1
10
102
103
IC (mA)
IC/IB 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.6 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Sep 10
5
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