BUR52_12 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
BUR52_12 Datasheet PDF : 3 Pages
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BUR52
HIGH CURRENT NPN SILICON TRANSISTORS
The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal
case,
Intented for use in switching and linear applications in military and industrial equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
IB
PT
TJ
TS
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC
ICM tp = (10 ms)
@ TC = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
250
350
10
60
80
16
350
200
-55 to +200
Unit
V
V
V
A
A
W
°C
Value
0.5
Unit
°C/W
COMSET SEMICONDUCTORS
1/3
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