BUR52 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BUR52 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUR52
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 25A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 40A; IB= 4A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 25A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 40A; IB= 4A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 250V;IB= 0
VCB= 350V; IE= 0
VCB= 350V; IE= 0; TC= 125℃
VEB= 7V; IC=0
hFE-1
DC Current Gain
IC= 5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 40A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V; ftest= 10MHz
MIN TYP. MAX UNIT
250
V
1.0
V
1.5
V
1.8
V
2.0
V
1.0 mA
0.2
2
mA
0.2 uA
20
100
15
10
MHz
isc website：www.iscsemi.com
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