BUR52 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
BUR52 Datasheet PDF : 4 Pages
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BUR52
Symbol
Ratings
IB
Base Current
Value
PT
Power Dissipation
@ TC = 25°
TJ
Junction Temperature
TS
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Unit
16
A
350
Watts
200
°C
-55 to +200
Value
0.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
ICEO
IEBO
ICBO
VCEO(SUS)
VEBO
VCE(SAT)
VBE(SAT)
Collector Cutoff Current
VCE = 250 V ; (IB = 0)
Emitter Cutoff Current
VBE = 7 V ; (IC = 0)
Collector Cutoff Current
TCASE = 25°C ; VCB = 350 V ; (IE = 0)
TCASE = 125°C ; VC = 350 V ; (IE = 0)
Collector-Emitter Sustaining
Voltage (*)
IC = 200 A
Emitter-Base Voltage
IC = 10 mA ; (IC = 0)
Collector-Emitter saturation IC = 25 A ; IB = 2 A
Voltage (*)
IC = 40 A ; IB = 4 A
Base-Emitter saturation
Voltage (*)
IC = 25 A ; IB = 2 A
IC = 40 A ; IB = 4 A
- - 1 mA
- - 0.2 µA
- - 0.2
mA
- -2
250 -
-
V
10 -
-
V
- -1
V
- 0.7 1.5
- - 1.8
V
- 1.5 2
COMSET SEMICONDUCTORS
2/4
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