BUR52 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

Manufacturer

BUR52

HIGH CURRENT NPN SILICON TRANSISTORS

Comset Semiconductors 

BUR52

Symbol

Ratings

Test Condition(s)

VCE = 4 V ; IC = 5 A

hFE

DC Current Gain (*)

VCE = 4 V ; IC = 40 A

Is/b

Second Breakdown

Collector Current

VCE = 20 V ; t = 1 s

fT

Transition - Frequency

VCE = 5 V ; IC = 1 A ; f = 1 MHz

ton

Turn-on time

VCC = 100 V ; IC = 40 A ; IB1 = 4 A

ts

Storage Time

ff

Fall Time

VCC = 100 V ; IC = 40 A

IB1= 4 A ; IB2 = -4 A

Clamped Es/b Collector

Current

Vclamp = 250 V ; L = 500 µH

(*) Pulse duration = 300 µs, Duty Cycle ∠ 1.5 %

Min Typ Mx Unit

20 - 100

-

15 - -

17.5 -

-

A

-

10 16 MHz

- 0.3 1 µs

- 1.2 2

µs

- 0.2 0.6

40 -

-

A

COMSET SEMICONDUCTORS

3/4

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