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MPC8541CPXAJD(2006) View Datasheet(PDF) - Freescale Semiconductor

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MPC8541CPXAJD Datasheet PDF : 84 Pages
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Electrical Characteristics
Table 2. Recommended Operating Conditions (continued)
Characteristic
Symbol
Recommended Value
Unit
Input voltage
DDR DRAM signals
MVIN
GND to GVDD
V
DDR DRAM reference
MVREF
GND to GVDD
V
Three-speed Ethernet signals
LVIN
GND to LVDD
V
PCI, local bus, DUART,
OVIN
GND to OVDD
V
SYSCLK, system control and
power management, I2C, and
JTAG signals
Die-junction Temperature
Tj
0 to 105
°C
Figure 2 shows the undershoot and overshoot voltages at the interfaces of the MPC8541E.
G/L/OVDD + 20%
G/L/OVDD + 5%
VIH
G/L/OVDD
GND
GND – 0.3 V
VIL
GND – 0.7 V
Note:
Not to Exceed 10%
of tSYS1
1. Note that tSYS refers to the clock period associated with the SYSCLK signal.
Figure 2. Overshoot/Undershoot Voltage for GVDD/OVDD/LVDD
The MPC8541E core voltage must always be provided at nominal 1.2 V (see Table 2 for actual
recommended core voltage). Voltage to the processor interface I/Os are provided through separate sets of
supply pins and must be provided at the voltages shown in Table 2. The input voltage threshold scales with
respect to the associated I/O supply voltage. OVDD and LVDD based receivers are simple CMOS I/O
circuits and satisfy appropriate LVCMOS type specifications. The DDR SDRAM interface uses a
single-ended differential receiver referenced the externally supplied MVREF signal (nominally set to
GVDD/2) as is appropriate for the SSTL2 electrical signaling standard.
MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specifications, Rev. 4
10
Freescale Semiconductor

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