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MPC8541CPXAJD View Datasheet(PDF) - Freescale Semiconductor

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Description
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MPC8541CPXAJD Datasheet PDF : 88 Pages
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DDR SDRAM
6 DDR SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8541E.
6.1 DDR SDRAM DC Electrical Characteristics
Table 11 provides the recommended operating conditions for the DDR SDRAM component(s) of the
MPC8541E.
Table 11. DDR SDRAM DC Electrical Characteristics
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.375
2.625
V
1
I/O reference voltage
MVREF
0.49 × GVDD
0.51 × GVDD
V
2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.18
GVDD + 0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.18
V
Output leakage current
IOZ
–10
10
μA
4
Output high current (VOUT = 1.95 V)
IOH
–15.2
mA
Output low current (VOUT = 0.35 V)
IOL
15.2
mA
MVREF input leakage current
IVREF
5
μA
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V VOUT GVDD.
Table 12 provides the DDR capacitance.
Table 12. DDR SDRAM Capacitance
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, MSYNC_IN
CIO
6
8
pF
1
Delta input/output capacitance: DQ, DQS
CDIO
0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak to peak) = 0.2 V.
MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2
16
Freescale Semiconductor

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