IRFB52N15DPBF(2005) View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFB52N15DPBF
(Rev.:2005)

HEXFET® Power MOSFET

International Rectifier 

PROVISIONAL

IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

150

–––

–––

3.0

–––

–––

–––

–––

––– –––

0.16 –––

––– 32

––– 5.0

––– 25

––– 250

––– 100

––– -100

V

V/°C

mΩ

V

µA

nA

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 36A „

VDS = VGS, ID = 250µA

VDS = 150V, VGS = 0V

VDS = 120V, VGS = 0V, TJ = 150°C

VGS = 30V

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

19 ––– ––– S VDS = 50V, ID = 36A

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

––– 60 89

––– 18 27

ID = 36A

nC VDS = 75V

Qgd

td(on)

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

––– 28 42

––– 16 –––

VGS = 10V, „

VDD = 75V

tr

td(off)

Rise Time

Turn-Off Delay Time

––– 47 ––– ns ID = 36A

––– 28 –––

RG = 2.5Ω

tf

Fall Time

Ciss

Input Capacitance

––– 25 –––

––– 2770 –––

VGS = 10V „

VGS = 0V

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

––– 590 –––

VDS = 25V

––– 110 ––– pF ƒ = 1.0MHz

Coss

Output Capacitance

Coss

Output Capacitance

––– 3940 –––

––– 260 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 120V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance

––– 550 –––

VGS = 0V, VDS = 0V to 120V …

Avalanche Characteristics

Parameter

EAS

dh Single Pulse Avalanche Energy

IAR

Ù Avalanche Current

EAR

™ Repetitive Avalanche Energy

™ VDS (Avalanche) Repetitive Avalanche Voltage

Min.

–––

–––

–––

200

Typ.

–––

–––

450

–––

Max.

470

36

–––

–––

Units

mJ

A

mJ

V

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) †

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 60

A showing the

––– ––– 240

integral reverse

G

p-n junction diode.

S

––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V „

––– 140 210 nS TJ = 25°C, IF = 36A

––– 780 1170 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2

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