UPD78F0034BYGC-8BS View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
UPD78F0034BYGC-8BS Datasheet PDF : 90 Pages
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µPD78F0034B, 78F0034BY, 78F0034B(A), 78F0034BY(A)
4. DIFFERENCES BETWEEN µPD78F0034B, 78F0034BY, AND MASK ROM VERSIONS
The µPD78F0034B and 78F0034BY are products provided with a flash memory which enables writing, erasing,
and rewriting of programs with device mounted on the target system.
The functions of the µPD78F0034B and 78F0034BY (except the functions specified for flash memory) can be made
the same as those of the mask ROM versions by setting the memory size switching register (IMS).
Tables 4-1 and 4-2 show the differences between the µPD78F0034B, 78F0034BY and the mask ROM versions.
Table 4-1. Differences Between µPD78F0034B and Mask ROM Versions
Item
µPD78F0034B
Mask ROM Versions
µPD780034A Subseries µPD780024A SubseriesNote
Internal ROM structure
Flash memory
Mask ROM
Internal ROM capacity
32 KB
Internal high-speed RAM capacity 1,024 bytes
µPD780031A: 8 KB
µPD780032A: 16 KB
µPD780033A: 24 KB
µPD780034A: 32 KB
µPD780031A: 512 bytes
µPD780032A: 512 bytes
µPD780033A: 1,024 bytes
µPD780034A: 1,024 bytes
µPD780021A: 8 KB
µPD780022A: 16 KB
µPD780023A: 24 KB
µPD780024A: 32 KB
µPD780021A: 512 bytes
µPD780022A: 512 bytes
µPD780023A: 1,024 bytes
µPD780024A: 1,024 bytes
Minimum instruction execution time Minimum instruction execution time variable function incorporated
When main system clock is selected
<µPD78F0034B and expanded-specification products of the mask ROM versions>
0.166 µs/0.333 µs/0.666 µs/1.33 µs/2.66 µs (@ 12 MHz operation, VDD = 4.5 to 5.5 V)
<Conventional products of the mask ROM versions>
0.238 µs/0.48 µs/0.95 µs/1.91 µs/3.81 µs (@ 8.38 MHz operation, VDD = 4.0 to 5.5 V)
When subsystem clock is selected 122 µs (32.768 kHz)
Clock output
<µPD78F0034B and expanded-specification products of the mask ROM versions>
• 93.75 kHz, 187.5 kHz, 375 kHz, 750 kHz, 1.25 MHz, 3 MHz, 6 MHz, 12 MHz
(@ 12 MHz operation with main system clock)
• 32.768 kHz (@ 32.768 kHz operation with subsystem clock)
<Conventional products of the mask ROM versions>
• 65.5 kHz, 131 kHz, 262 kHz, 524 kHz, 1.05 MHz, 2.10 MHz, 4.19 MHz, 8.38 MHz
(@ 8.38 MHz operation with main system clock)
• 32.768 kHz (@ 32.768 kHz operation with subsystem clock)
Buzzer output
<µPD78F0034B and expanded-specification products of the mask ROM versions>
1.46 kHz, 2.93 kHz, 5.86 kHz, 11.7 kHz (@ 12 MHz operation with main system clock)
<Conventional products of the mask ROM versions>
• 1.02 kHz, 2.05 kHz, 4.10 kHz, 8.19 kHz (@ 8.38 MHz operation with main system clock)
A/D converter resolution
10 bits
8 bits
Mask option specification of on-chip Not available
pull-up resistor for pins P30 to P33
Available
IC pin
Not provided
Provided
VPP pin
Provided
Not provided
Electrical specifications,
recommended soldering conditions
Refer to the data sheet of individual products.
Note The µPD78F0034B can be used as the flash memory version of the µPD780024A Subseries.
Caution There are differences in noise immunity and noise radiation between the flash memory and mask
ROM versions. When pre-producing an application set with the flash memory version and then mass
producing it with the mask ROM version, be sure to conduct sufficient evaluations on the
commercial samples (CS) (not engineering samples (ES)) of the mask ROM versions.
Data Sheet U16369EJ1V0DS
19
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