2SB1182 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1182

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1182

DESCRIPTION

·Small and slim package

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Power dissipation

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-32

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-2

A

1.5

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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