2SC1358 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SC1358

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=4A; IB=0.8A

ICES

Collector cut-off current

VCE=1400V; VBE=0

ICBO

Collector cut-off current

VCB=1000V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.5A ; VCE=15V

hFE-2

DC current gain

IC=3A ; VCE=15V

tstg

Storage time

tf

Fall time

IC=4A; IB1=-IB2=1.0A

PW=20µs

Product Specification

2SC1358

MIN TYP. MAX UNIT

500

V

10

V

1.2

V

1.0

mA

20

µA

200

µA

10

45

5

35

10

µs

1.0

µs

2

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