Philips Semiconductors
2.7 GHz I2C-bus controlled low phase
noise frequency synthesizer
Preliminary specification
TSA5059
CHARACTERISTICS
VCC = 4.5 to 5.5 V; Tamb = −20 to +85 °C; fxtal = 4 MHz; measured according to Fig.4; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply (pin VCC)
VCC
ICC
VCC(POR)
supply voltage
supply current
Tamb = 25 °C
supply voltage below which POR is active Tamb = 25 °C
RF inputs (pins RFA and RFB)
4.5
5.0 5.5
V
30
37
45
mA
−
2.75 −
V
fi(RF)
Vi(RF)(rms)
RF input frequency
RF input voltage (RMS value)
Zi(RF)
Ci(RF)
MDR
RF input impedance
RF input capacitance
main divider ratio
64
−
fi(RF) between 64 and 12.6 −
150 MHz; note 1
−25 −
fi(RF) between 150 and 7.1
−
2200 MHz; note 1
−30 −
fi(RF) between 2.2 and 22.4 −
2.7 GHz; note 1
−20 −
see Fig.7
−
−
see Fig.7
−
−
prescaler disabled
64
−
prescaler enabled
128 −
2700 MHz
300
mV
+2.5 dBm
300
mV
+2.5 dBm
300
mV
+2.5 dBm
−
Ω
−
pF
131 071
262 142
Crystal oscillator (pin XTAL)
fxtal
ZXTAL
ZXTAL
PXTAL
fi(ext)
Vi(ext)(p-p)
crystal frequency
4
crystal oscillator negative impedance
4 MHz crystal
400
recommended crystal series resistance 4 MHz crystal
−
crystal drive level
4 MHz crystal; note 2 −
external reference input frequency
note 3
2
external reference input voltage
note 3
200
(peak-to-peak value)
−
16
680 −
−
200
40
−
−
20
−
500
MHz
Ω
Ω
µW
MHz
mV
Phase comparator and charge pump
fcomp
Ncomp
Icp
Icpl
comparison frequency
equivalent phase noise at the phase
detector input
charge pump current
charge pump leakage current
−
fcomp = 250 kHz;
−
C1 = C0 = 1;
in the loop bandwidth
C1 = 0; C0 = 0
100
C1 = 0; C0 = 1
210
C1 = 1; C0 = 0
450
C1 = 1; C0 = 1
920
−10
−
2
−157 −
MHz
dBc/Hz
135 170
µA
280 350
µA
600 750
µA
1230 1540 µA
0
+10 nA
1999 Oct 05
12