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TSA5059TS View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
TSA5059TS Datasheet PDF : 24 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
Philips Semiconductors
2.7 GHz I2C-bus controlled low phase
noise frequency synthesizer
Preliminary specification
TSA5059
CHARACTERISTICS
VCC = 4.5 to 5.5 V; Tamb = 20 to +85 °C; fxtal = 4 MHz; measured according to Fig.4; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply (pin VCC)
VCC
ICC
VCC(POR)
supply voltage
supply current
Tamb = 25 °C
supply voltage below which POR is active Tamb = 25 °C
RF inputs (pins RFA and RFB)
4.5
5.0 5.5
V
30
37
45
mA
2.75
V
fi(RF)
Vi(RF)(rms)
RF input frequency
RF input voltage (RMS value)
Zi(RF)
Ci(RF)
MDR
RF input impedance
RF input capacitance
main divider ratio
64
fi(RF) between 64 and 12.6
150 MHz; note 1
25
fi(RF) between 150 and 7.1
2200 MHz; note 1
30
fi(RF) between 2.2 and 22.4
2.7 GHz; note 1
20
see Fig.7
see Fig.7
prescaler disabled
64
prescaler enabled
128
2700 MHz
300
mV
+2.5 dBm
300
mV
+2.5 dBm
300
mV
+2.5 dBm
pF
131 071
262 142
Crystal oscillator (pin XTAL)
fxtal
ZXTAL
ZXTAL
PXTAL
fi(ext)
Vi(ext)(p-p)
crystal frequency
4
crystal oscillator negative impedance
4 MHz crystal
400
recommended crystal series resistance 4 MHz crystal
crystal drive level
4 MHz crystal; note 2
external reference input frequency
note 3
2
external reference input voltage
note 3
200
(peak-to-peak value)
16
680
200
40
20
500
MHz
µW
MHz
mV
Phase comparator and charge pump
fcomp
Ncomp
Icp
Icpl
comparison frequency
equivalent phase noise at the phase
detector input
charge pump current
charge pump leakage current
fcomp = 250 kHz;
C1 = C0 = 1;
in the loop bandwidth
C1 = 0; C0 = 0
100
C1 = 0; C0 = 1
210
C1 = 1; C0 = 0
450
C1 = 1; C0 = 1
920
10
2
157
MHz
dBc/Hz
135 170
µA
280 350
µA
600 750
µA
1230 1540 µA
0
+10 nA
1999 Oct 05
12

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