BCV27 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BCV27

NPN Silicon Darlington Transistors

Siemens AG 

BCV 27

BCV 47

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

BCV 27

BCV 47

Collector-base breakdown voltage

IC = 100 µA

BCV 27

BCV 47

Emitter-base breakdown voltage, IE = 10 µA

Collector cutoff current

VCB = 30 V

VCB = 60 V

VCB = 30 V, TA = 150 ˚C

VCB = 60 V, TA = 150 ˚C

BCV 27

BCV 47

BCV 27

BCV 47

Emitter cutoff current, VEB = 4 V

DC current gain1)

IC = 100 µA, VCE = 1 V

IC = 10 mA, VCE = 5 V

IC = 100 mA, VCE = 5 V

IC = 0.5 A, VCE = 5 V

BCV 27

BCV 47

BCV 27

BCV 47

BCV 27

BCV 47

BCV 27

BCV 47

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

Base-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

V(BR)CE0

30

–

60

–

V(BR)CB0

V(BR)EB0

ICB0

IEB0

hFE

VCEsat

40

–

80

–

10

–

–

–

–

–

–

–

–

–

–

–

4000 –

2000 –

10000 –

4000 –

20000 –

10000 –

4000 –

2000 –

–

–

VBEsat

–

–

V

–

–

–

–

–

100 nA

100 nA

10

µA

10

µA

100 nA

–

–

–

–

–

–

–

–

–

1

V

1.5

AC characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

Output capacitance

VCB = 10 V, f = 1 MHz

fT

–

Cobo

–

170 –

3.5 –

MHz

pF

1) Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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