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STTA812G(1999) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STTA812G
(Rev.:1999)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTA812G Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STTA812D/DI/G
THERMAL AND POWER DATA
Symbol
Rth(j-c)
P1
Pmax
Parameter
Junction to case thermal
resistance
Conduction power dissipation
IF(AV) = 8A δ =0.5
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Conditions
TO-220AC/D2PAK
TO-220AC Ins.
TO-220AC/D2PAK Tc= 105°C
TO-220AC Ins. Tc= 85°C
TO-220AC/D2PAK Tc= 100°C
TO-220AC Ins. Tc= 79°C
Value
2.3
3.3
19.5
Unit
°C/W
W
21.5
W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage current
Vto Threshold voltage
rd
Dynamic parameter
Test pulses : * tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Test conditions
Min
IF =8A
Tj = 25°C
Tj = 125°C
VR =0.8 x
VRRM
Tj = 25°C
Tj = 125°C
Ip < 3.IAV Tj = 125°C
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
trr
Reverse recovery
time
IRM
Maximum reverse
recovery current
S factor Softness factor
Test conditions
Min
Tj = 25°C
IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR =30V
Tj = 125°C VR = 600V IF =8A
dIF/dt = -64 A/µs
dIF/dt = -500 A/µs
Tj = 125°C VR = 600V IF =8A
dIF/dt = -500 A/µs
Typ
1.35
0.6
Typ
50
25
1.2
Max
2.2
2.0
100
4
1.57
54
Max
100
12
Unit
V
V
µA
mA
V
m
Unit
ns
A
-
TURN-ON SWITCHING
Symbol
Parameter
tfr
Forward recovery time
VFp Peak forward voltage
2/10
Test conditions
Min Typ Max Unit
Tj = 25°C
IF =8 A, dIF/dt = 64 A/µs
measured at 1.1 × VFmax
ns
900
Tj = 25°C
IF =8A, dIF/dt = 64 A/µs
IF =40A, dIF/dt = 500 A/µs
V
35
45

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