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RF2317_ View Datasheet(PDF) - RF Micro Devices

Part Name
Description
Manufacturer
RF2317_
RFMD
RF Micro Devices RFMD
RF2317_ Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
RF2317
Absolute Maximum Ratings
Parameter
Device Current
Input RF Power
Output Load VSWR
Ambient Operating Temperature
Storage Temperature
Rating
250
+18
20:1
-40 to +85
-40 to +150
Unit
mA
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall (50Ω)
Frequency Range
Gain
Noise Figure
Input VSWR
Specification
Min.
Typ.
Max.
DC
3000
13.5
14.3
15.0
4.9
1.7:1
Output VSWR
2.3:1
Output IP3
+47
+37
+42
+37
Output IP2
Output P1dB
+55
+25.5
+24
+22
Reverse Isolation
19.5
Thermal
ThetaJC
55
Maximum Junction Temperature
150
Mean Time To Failures
3100
ThetaJC
58
Maximum Junction Temperature
175
Mean Time To Failures
380
Power Supply (50Ω)
Device Voltage
8.5
9.3
Operating Current Range
100
180
200
Unit
MHz
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
°C/W
°C
years
°C/W
°C
years
V
V
mA
Condition
T=+25°C, ICC=180mA, RC=10.2Ω,
50Ω System
3dB Bandwidth
From 100MHz to 1000MHz
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
At 100MHz
At 500MHz
At 900MHz
F1=400MHz, F2=500MHz, FOUT=100MHz
At 100MHz
At 500MHz
At 900MHz
ICC=150mA, PDISS =1.2W, TAMB=85°C
TAMB = +85 °C
ICC=180mA, PDISS =1.5W, TAMB=85°C
TAMB = +85 °C
On pin 13, ICC=150mA
On pin 13, ICC=180mA
Actual current determined by VCC and RC
3-18
Rev A19 050822

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