DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BF988 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
BF988 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
RthChA
450
K/W
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown
ID = 10 μA, - VG1S = - VG2S = 4 V
V(BR)DS
12
V
voltage
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0
± V(BR)G1SS
7
14
V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0
± V(BR)G2SS
7
14
V
Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0
± IG1SS
50
nA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
50
nA
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V BF988A
IDSS
4
10.5
mA
Gate 1 - source cut-off voltage VDS = 15 V, VG2S = 4 V,
ID = 20 μA
- VG1S(OFF)
2.5
V
Gate 2 - source cut-off voltage VDS = 15 V, VG1S = 0, ID = 20 μA
- VG2S(OFF)
2.0
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
|y21s|
21
24
mS
Gate 1 input capacitance
Cissg1
2.1
2.5
pF
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Cissg2
1.2
pF
Feedback capacitance
Crss
25
fF
Output capacitance
Coss
1.05
pF
Power gain
GS = 2 mS, GL = 0.5 mS,
Gps
28
dB
f = 200 MHz
GS = 3,3 mS, GL = 1 mS,
Gps
16.5
20
dB
f = 800 MHz
AGC range
VG2S = 4 to - 2 V, f = 800 MHz
ΔGps
40
dB
Noise figure
GS = 2 mS, GL = 0.5 mS,
F
f = 200 MHz
1
dB
GS = 3,3 mS, GL = 1 mS,
F
f = 800 MHz
1.5
dB
www.vishay.com
2
Document Number 85007
Rev. 1.7, 11-Sep-08

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]