IS43TR16256A(2012) View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS43TR16256A
(Rev.:2012)

512Mx8, 256Mx16 4Gb DDR3 SDRAM

Integrated Silicon Solution 

IS43/46TR16256A, IS43/46TR16256AL,

IS43/46TR85120A, IS43/46TR85120AL

3. ABSOLUTE MAXIMUM RATINGS AND AC & DC OPERATING CONDITIONS

3.1 Absolute Maximum DC Ratings.

Symbol

Parameter

Rating

Units

Note

VDD

Voltage on VDD pin relative to Vss

-0.4 V ~ 1.975 V

V

1,3

VDDQ

Voltage on VDDQ pin relative to Vss

-0.4 V ~ 1.975 V

V

1,3

VIN, VOUT

Voltage on any pin relative to Vss

-0.4 V ~ 1.975 V

V

1

TSTG

Storage Temperature

-55 to +100

°C

1,2

Notes:

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions.

3. VDD and VDDQ must be within 300 mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less

than 500 mV; VREF may be equal to or less than 300 mV

3.2 Component Operating Temperature Range

Symbol

Parameter

Rating

Units

Notes

Toper for Commercial

Normal Operating Temperature Range

Extended Temperature Range

0 to 85

85 to 95

°C

1,2

°C

1,3

Toper for Industrial and

Automotive

Normal Operating Temperature Range

-40 to 0

°C

1

Toper for Automotive

(A2 only)

Normal Operating Temperature Range

95 to 105

°C

1,3

Notes:

1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM.

2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case

temperature must be maintained between 0 to 85°C under all operating conditions

3. Some applications require operation of the DRAM in the Extended Temperature Range above 85°C case temperature. Full specifications are

supported in this range, but the following additional conditions apply:

a ) Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs.

b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with

Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2

A7 = 0b).

3.3 Recommended DC Operating Conditions(SSTL_1.5)

Symbol

Parameter

Min

Rating

Typ

Max

Unit

VDD

Supply Voltage

DDR3

DDR3L

1.425

1.283

1.5

1.35

1.575

V

1.45

V

VDDQ

Supply Voltage

for Output

DDR3

DDR3L

1.425

1.283

1.5

1.35

1.575

V

1.45

V

Notes:

1. Under all conditions VDDQ must be less than or equal to VDD.

2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average of VDD/VDD (t) over a long period of time.

4. If the limit is exceeded, the input levels are covered by the DDR3 specification.

5. With these supply voltages, the device operates with DDR3L specifications.

6. After initialized for DDR3 operation, the DDR3L may be used only upon reset.

7. The DDR3L product supports 1.5V operating range and specs.

Notes

1,2

3,4,5,6,7

1,2

3,4,5,6,7

Integrated Silicon Solution, Inc. – www.issi.com –

29

Rev. 00A

11/14/2012

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