2SA1768 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

Manufacturer

2SA1768

PNP Epitaxial Planar Silicon Transistor

SANYO -> Panasonic 

2SA1768/2SC4612

Parameter

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Symbol

Conditions

V(BR)CBO

V(BR)CBO

V(BR)EBO

ton

tstg

IC=10µA, IE=0

IC=1mA, RBE=∞

IE=10µA, IC=0

See specified Test Circuit

See specified Test Circuit

Fall Time

tf

See specified Test Circuit

* : The 2SA1768/2SC4612 are classified by 100mA hFE as follows :

100 R 200 140 S 280 200 T 400

Switching Time Test Circuit

Ratings

Unit

min

typ

max

(–)180

V

(–)160

V

6

V

(60)50

ns

(900)

ns

1000

ns

(60)60

ns

Unit (resistance : Ω, capacitance : F)

No.3582-2/5

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