SMBJ200A_ View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
Manufacturer
SMBJ200A_ Datasheet PDF : 7 Pages
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Typical Characteristics
100
10
FIG1:Peak Pulse Power Rating Curve
Non-Repetitive Pulse
Waveform shown in Fige.3
TA=25℃
1.0
0.2×0.2"(5.0×5.0mm)
0.1
Copper Pad Areas
0.1μs 1μs
10μs
100μs
1.0ms
10ms
td(μs)
150
100
FIG3: Pulse Waveform
tr=10μs
Peak Value
IPPM
TJ=25 ℃
Pulse Width(td) is defined as
the Point where the Peak
Current Decays to 50% of IPPM
Half Value - IPP
2
IPPM
50
10/1000μs Waveform as
Defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t（ms）
FIG5: Maximum Non-Repetitive Surge Current
200
TJ=TJMax.
100
8.3ms Single Half Sine-Wave
50
10
0
10
100
Number of Cycles
FIG2: Pulse Power or Current vs. Initial Junction Temperature
100
75
50
25
0
0
100
25 50
75 100 125 150 175 200
TJ（℃）
FIG4:Typical Transient Thermal Impedance
10
1
0.1
0.001 0.01
0.1
1
10
100 1000
tp(s)
FIG6:Steady State Power Dissipation
6
5
4
3
2
1
00 25 50 75 100 125 150 175 200
TL(℃)
High Diode Semiconductor
5
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