DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BC637 View Datasheet(PDF) - Nanjing International Group Co

Part Name
Description
Manufacturer
BC637
DGNJDZ
Nanjing International Group Co DGNJDZ
BC637 Datasheet PDF : 3 Pages
1 2 3
BC635 / BC637 / BC639
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at VCE = 2 V, IC = 5 mA
at VCE = 2 V, IC = 150 mA
at VCE = 2 V, IC = 500 mA
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
hFE
40
BC635
hFE
40
BC637 / BC639
hFE
40
hFE
25
ICBO
-
IEBO
-
BC635
45
BC637
V(BR)CBO
60
BC639
100
Collector Emitter Breakdown Voltage
at IC = 10 mA
BC635
45
BC637
V(BR)CEO
60
BC639
80
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Voltage
at VCE = 2 V, IC = 500 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 50 mA, f = 100 MHz
V(BR)EBO
VCE(sat)
VBE
fT
5
-
-
100
Max.
-
250
160
-
100
100
-
-
-
-
-
-
-
0.5
1
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
MHz

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]