BC637 View Datasheet(PDF) - Nanjing International Group Co

Part Name

Description

Manufacturer

BC637

NPN Silicon Epitaxial Planar Transistor

Nanjing International Group Co 

BC635 / BC637 / BC639

Static Characteristics

1 .8 m A

1.6mA

1 .4 m A

1 .2 m A

1 .0 m A

0.8mA

0.6mA

0 .4 m A

IB=0.2 mA

Collector Emitter Voltage VCE (V)

Base Emitter Saturation Voltage

Collector Emitter Saturation Voltage

DC Current Gain

Collector Current IC (mA)

Base Emitter On Voltage

C o l l e c t o r C u r r e n t IC ( m A )

Collector Output Capacitance

Base Emitter Voltage VBE (V)

Collector Base Voltage VCB (V)

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