BC637 View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
Manufacturer
BC637 Datasheet PDF : 5 Pages
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SILICON PLANAR EPITAXIAL TRANSISTORS
ECB
BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
*hFE
VCE=2V, IC=5mA
MIN MAX
25
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transistors Frequency
Output Capacitance
Input Capacitance
VCE=2V, IC=150mA
BC635/BC636 40
250
BC637/BC638 40
160
BC639/BC640 40
160
Group-10 63
160
Group-16 100 250
VCE=2V, IC=500mA
25
SYMBOL
TEST CONDITION
fT IC=50mA, VCE=2V, f=100MHz
NPN
PNP
Cob
IE=0, VCB=10V, f=1MHz
NPN
PNP
Cib
VBE=0.5V, f=1MHz
NPN
PNP
TYP
200
150
7
9
50
110
*Pulse Test: Pulse Width < 300µs, Duty Cycle 2%
BC635_BC640Rev_4 030106E
UNIT
UNIT
MHz
MHz
pF
pF
pF
pF
Continental Device India Limited
Data Sheet
Page 2 of 5
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