BC637 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
BC637 Datasheet PDF : 4 Pages
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BC635/637/639
Switching and Amplifier Applications
• Complement to BC636/638/640
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCER
Collector-Emitter Voltage at RBE=1KΩ
: BC635
: BC637
: BC639
VCES
Collector-Emitter Voltage
: BC635
: BC637
: BC639
VCEO
Collector-Emitter Voltage
: BC635
: BC637
: BC639
VEBO
Emitter-Base Voltage
IC
Collector Current
ICP
Peak Collector Current
IB
Base Current
PC
Collector Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
• PW=5ms, Duty Cycle=10%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
: BC635
: BC637
: BC639
IC=10mA, IB=0
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(on)
fT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: All
: BC635
: BC637/BC639
: All
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
VCB=30V, IE=0
VEB=5V, IC=0
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
VCE=5V, IC=10mA,
f=50MHz
©2002 Fairchild Semiconductor Corporation
1
TO-92
1. Emitter 2. Collector 3. Base
Value
45
60
100
45
60
100
45
60
80
5
1
1.5
100
1
150
-65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
Min.
45
60
80
25
40
40
25
Typ.
100
Max. Units
V
V
V
0.1
µA
0.1
µA
250
160
0.5
V
1
V
MHz
Rev. B2, December 2002
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