BC637-16 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BC637-16 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN medium power transistors
Product specification
BC635; BC637; BC639
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Driver stages of audio/video amplifiers.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC636, BC638 and BC640.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage1
2
3
2
1
3
MAM259
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC635
BC637
BC639
collector-emitter voltage
BC635
BC637
BC639
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN. MAX. UNIT
−
45
V
−
60
V
−
100
V
−
45
V
−
60
V
−
80
V
−
5
V
−
1
A
−
1.5
A
−
200
mA
−
0.83 W
−65
+150 °C
−
150
°C
−65
+150 °C
1999 Apr 23
2
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