BC637-16 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BC637-16 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistors
Product specification
BC635; BC637; BC639
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
150
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBE
fT
hh----FF---EE---12-
DC current gain
BC639-10
BC635-16; BC637-16; BC639-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
VCE = 2 V; see Fig.2
IC = 5 mA
IC = 150 mA
IC = 500 mA
IC = 150 mA; VCE = 2 V; see Fig.2
IC = 500 mA; IB = 50 mA
IC = 500 mA; VCE = 2 V
IC = 50 mA; VCE = 5 V; f = 100 MHz
IC = 150 mA; VCE = 2 V
MIN.
−
−
−
MAX.
100
10
100
UNIT
nA
µA
nA
40
−
63
250
25
−
63
160
100
250
−
500
mV
−
1
V
100
−
MHz
−
1.6
1999 Apr 23
3
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