BC637 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BC637

NPN Silicon AF Transistors

Infineon Technologies 

BC 635

… BC 639

Maximum Ratings

Parameter

Symbol Values

BC 635

Collector-emitter voltage

VCE0

45

Collector-base voltage

VCB0

45

Emitter-base voltage

VEB0

Collector current

IC

Peak collector current

ICM

Base current

IB

Peak base current

IBM

Total power dissipation, TC = 90 ˚C1) Ptot

Junction temperature

Tj

Storage temperature range

Tstg

BC 637 BC 639

60

80

60

100

5

1

1.5

100

200

0.8 (1)

150

– 65 … + 150

Thermal Resistance

Junction - ambient1)

Junction - case2)

Rth JA

Rth JC

≤ 156

≤ 75

Unit

V

A

mA

W

˚C

K/W

1) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area

for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.

2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

Semiconductor Group

2

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