2SK2983 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK2983
NEC => Renesas Technology
2SK2983 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
VGS = 4.5 V
10 V
20
10
0
ID = 15 A
- 50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
0.1
1
10
100
IF - Diode Current - A
2SK2983
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Pulsed
100
10
VGS = 0 V
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(off)
td(on)
10
1
0.1
VDD = 15 V
VGS = 10 V
RG = 10 Ω
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 30 A
14
30
VDD = 24 V
20
15 V
6V
12
VGS
10
8
6
10
4
VDS
2
0
10
20
30
40
QG - Gate Charge - nC
5
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