MMFT2N02EL
VGS
1800
Ciss
1600
Crss
1400
VDS
Coss
TJ = 25°C
f = 1 MHz
1200
1000
800
Ciss
600
400
Coss
200
Crss
0 20 15
10
5
0
5
10 15 20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 14. Capacitance Variation With Voltage
10
9
TJ = 25°C
8
VDS = 16 V
ID = 1.6 A
7
6
5
4
3
2
1
00
5
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Figure 15. Gate Charge versus Gate−To−Source Voltage
+18 V
VDD
1 mA
47 k
Vin 15 V
2N3904
2N3904
100 k
47 k
5 V 100 k
SAME
DEVICE TYPE
AS DUT
0.1 μF
FERRITE
100 BEAD
DUT
Vin = 15 Vpk; PULSE WIDTH ≤ 100 μs, DUTY CYCLE ≤ 10%.
Figure 16. Gate Charge Test Circuit
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