S25FL256SDSBFIQ01 View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
S25FL256SDSBFIQ01
Cypress Semiconductor
S25FL256SDSBFIQ01 Datasheet PDF : 144 Pages
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S25FL128S, S25FL256S
1.2 Migration Notes
1.2.1
Features Comparison
The S25FL128S and S25FL256S devices are command set and footprint compatible with prior generation FL-K and FL-P families.
Table 1.1 FL Generations Comparison
Parameter
Technology Node
Architecture
Release Date
Density
Bus Width
Supply Voltage
Normal Read Speed (SDR)
Fast Read Speed (SDR)
Dual Read Speed (SDR)
Quad Read Speed (SDR)
Fast Read Speed (DDR)
Dual Read Speed (DDR)
Quad Read Speed (DDR)
Program Buffer Size
Erase Sector Size
Parameter Sector Size
Sector Erase Time (typ.)
Page Programming Time (typ.)
OTP
Advanced Sector Protection
Auto Boot Mode
Erase Suspend/Resume
Program Suspend/Resume
Operating Temperature
FL-K
90 nm
Floating Gate
In Production
4 Mb - 128 Mb
x1, x2, x4
2.7V - 3.6V
6 MB/s (50 MHz)
13 MB/s (104 MHz)
26 MB/s (104 MHz)
52 MB/s (104 MHz)
-
-
-
256B
4 kB / 32 kB / 64 kB
4 kB
30 ms (4 kB), 150 ms (64 kB)
700 µs (256B)
768B (3 x 256B)
No
No
Yes
Yes
-40°C to +85°C
FL-P
90 nm
MirrorBit
In Production
32 Mb - 256 Mb
x1, x2, x4
2.7V - 3.6V
5 MB/s (40 MHz)
13 MB/s (104 MHz)
20 MB/s (80 MHz)
40 MB/s (80 MHz)
-
-
-
256B
64 kB / 256 kB
4 kB
500 ms (64 kB)
1500 µs (256B)
506B
No
No
No
No
-40°C to +85°C / +105°C
Notes:
1. 256B program page option only for 128-Mb and 256-Mb density FL-S devices.
2. FL-P column indicates FL129P MIO SPI device (for 128-Mb density).
3. 64-kB sector erase option only for 128-Mb/256-Mb density FL-P and FL-S devices.
4. FL-K family devices can erase 4-kB sectors in groups of 32 kB or 64 kB.
5. Refer to individual data sheets for further details.
FL-S
65 nm
MirrorBit Eclipse
2H2011
128 Mb - 256 Mb
x1, x2, x4
2.7V - 3.6V / 1.65V - 3.6V VIO
6 MB/s (50 MHz)
17 MB/s (133 MHz)
26 MB/s (104 MHz)
52 MB/s (104 MHz)
20 MB/s (80 MHz)
40 MB/s (80 MHz)
80 MB/s (80 MHz)
256B / 512B
64 kB / 256 kB
4 kB (option)
130 ms (64 kB), 520 ms (256 kB)
250 µs (256B), 340 µs (512B)
1024B
Yes
Yes
Yes
Yes
-40°C to +85°C /
+105°C / +125°C
1.2.2
Known Differences from Prior Generations
1.2.2.1
Error Reporting
Prior generation FL memories either do not have error status bits or do not set them if program or erase is attempted on a protected
sector. The FL-S family does have error reporting status bits for program and erase operations. These can be set when there is an
internal failure to program or erase or when there is an attempt to program or erase a protected sector. In either case the program or
erase operation did not complete as requested by the command.
Document Number: 001-98283 Rev. *I
Page 6 of 144
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