2SK2715_REV_B View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

2SK2715_REV_B

10V Drive Nch MOS FET

ROHM Semiconductor 

Transistors

2SK2715

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Test Conditions

Gate-source leakage

IGSS

−

− ±100 nA VGS=±30V, VDS=0V

Drain-source breakdown voltage V(BR)DSS 500

−

−

V ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

−

−

100

µA VDS=500V, VGS=0V

Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance

VGS(th)

2.0

RDS(on)∗

−

| Yfs | ∗ 0.6

−

4.0

3.0 4.0

1.5

−

V VDS=10V, ID=1mA

Ω ID=1A, VGS=10V

S ID=1A, VDS=10V

Input capacitance

Ciss

−

280 −

pF VDS=10V

Output capacitance

Coss

−

58

−

pF VGS=0V

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Reverse recovery time

Reverse recovery charge

∗ Pulsed

Crss

−

td(on) ∗

−

tr ∗

−

td(off) ∗

−

tf ∗ −

trr ∗

−

Qrr ∗

−

23

−

10

−

12

−

30

−

63

−

410 −

1.7

−

pF f=1MHz

ns ID=1A, VDD 150V

ns VGS=10V

ns RL=150Ω

ns RG=10Ω

ns IDR=2A, VGS=0V

µC di/dt=100A/µs

zElectrical characteristic curves

10

5

2

1

OpiserlaimtioitnedinbtyhiRsDaSr(oena)

0.5

0.2

0.1

0.05

P

DC OWp=e1r0a0tmio1ns0ms

0.02 Tc=25°C

0.01 Single pulse

1 2 5 10 20

50 100 200 500 1000

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Maximum safe operating area

2.0

VGS=10V

Ta=25°C

1.8

Pulsed

6V

1.6

1.4

1.2

5V

1.0

0.8

0.6

0.4

4.5V

0.2

4V

0

0 1 2 3 4 5 6 7 8 9 10

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.2 Typical output characteristics

10

VDS=10V

Pulsed

5

2

1

0.5

Ta=−25°C 25°C

75°C

125°C

0.2

0.1

0.05

012345678

GATE-SOURCE VOLTAGE : VGS (V)

Fig.3 Typical transfer characteristics

6.4

VDS=10V

lD=1mA

5.6

4.8

4.0

3.2

2.4

1.6

0.8

0

−50 −25 0 25 50 75 100 125 150

CHANNEL TEMPERATURE : Tch (°C)

Fig.4 Gate threshold voltage

vs. channel temperature

50

VGS=4V

Pulsed

20

10

Ta=125°C

5

75°C

25°C

2

−25°C

1

0.5

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5

DRAIN CURRENT : ID (A)

8

Ta=25°C

7

Pulsed

6

5

4

ID=2A

3

1A

2

1

0

5 10 15 20 25 30

GATE-SOURCE VOLTAGE : VGS (V)

Fig.5 Static drain-source on-state Fig.6 Static drain-source on-state

resistance vs. drain current

resistance vs. gate-source voltage

Rev.B

2/4

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