2SK2715_REV_B View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
2SK2715_REV_B Datasheet PDF : 5 Pages
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Transistors
2SK2715
12
VGS=10V
Pulsed
10
8
6
ID=2A
4
1A
2
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
5
VDS=10V
Pulsed
2
−25°C
1
25°C
75°C
Ta=125°C
0.5
0.2
0.1
0.05
0.02
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
DRAIN CURRENT : ID (A)
Fig.8 Forward transfer admittance
vs. drain current
5
VGS=0V
Pulsed
2
Ta=125°C
75°C
1
25°C
−25°C
0.5
0.2
0.1
0.05
0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current
vs. source-drain voltage ( Ι )
5
Ta=25°C
Pulsed
2
10V
VGS=0V
1
0.5
0.2
0.1
0.05
0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse drain current
vs. source-drain voltage ( ΙΙ )
1000
500
200
100
50
Ta=25°C
VGS=0V
f=1MHz
Ciss
Pulsed
Coss
20
Crss
10
5
2
1 2 5 10 20 50 100 200 5001000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance
vs. drain-source voltage
1000
500
200
Ta=25°C
VDD=150V
VGS=10V
RG=10Ω
Pulsed
100
tf
50
td(off)
20
tr
td(on)
10
5
0.1 0.2 0.5 1 2
5 10 20
DRAIN CURRENT : ID (A)
Fig.12 Switching characteristics
(See Figures 16 and 17 for
the measurement circuit and
resultant waveforms)
500
450
VDS
400
Ta=25°C 20
ID=5A
18
Pulsed
16
350
14
300
VDD=100V VGS 12
250V
250
400V
10
200
8
150
6
100
VDD=400V
4
250V
50
100V
2
0
0
0 4 8 12 16 20 24 28 32
TOTAL GATE CHARGE : Qg (nC)
Fig.13 Dynamic input characteristics
(See Figure 18 for measurement circuit)
5000 Ta=25°C
di/dt=100A/µs
2000
VGS=0V
Pulsed
1000
500
200
100
50
0.1 0.2
0.5 1
2
5 10
REVERSE DRAIN CURRENT : IDR (A)
Fig.14 Reverse recovery time
vs. reverse drain current
Rev.B
3/4
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