BF819 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BF819 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistor
Product specification
BF819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 75 °C
Tmb ≤ 75 °C
MIN.
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
300
250
5
100
300
100
1.2
6
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
in free air
thermal resistance from junction to mounting base
VALUE
62.5
12.5
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
ICBO
IEBO
hFE
VCEsat
Cc
Cre
fT
collector cut-off current
IE = 0; VCB = 250 V
−
IE = 0; VCB = 250 V; Tj = 150 °C
−
emitter cut-off current
IC = 0; VEB = 5 V
−
DC current gain
IC = 20 mA; VCE = 10 V
45
collector-emitter saturation voltage IC = 200 mA; IB = 20 mA
−
collector capacitance
IE = ie = 0; VCB = 30 V; f = 1 MHz
−
feedback capacitance
IC = ic = 0; VCB = 30 V; f = 1 MHz
−
transition frequency
IC = 15 mA; VCE = 10 V; f = 100 MHz 90
MAX.
50
5
100
−
11
4.5
3.5
−
UNIT
nA
µA
nA
V
pF
pF
MHz
1997 Sep 03
3
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