DTB114EK(2012) View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

DTB114EK
(Rev.:2012)

PNP -500mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

ROHM Semiconductor 

DTB114EK

Absolute maximum ratings (Ta = 25C)

Parameter

Supply voltage

Input voltage

Output current

Power dissipation

Junction temperature

Range of storage temperature

Symbol

VCC

VIN

IC

PD *2

Tj

Tstg

Data Sheet

Values

Unit

50

V

40 to 10

V

500

mA

200

mW

150

C

55 to 150

C

Electrical characteristics(Ta = 25C)

Parameter

Symbol

1) Built-In Biasing Resistors, R1

= R2 = 10k.

Output voltage

Input current

Output current

VI(off)

VI(on)

VO(on)

II

IO(off)

DC current gain

GI

Input resistance

R1

Resistance ratio

R2/R1

Conditions

VCC = 5V, IO = 100μA

VO = 0.3V, IO = 10mA

IO / II = 50mA / 2.5mA

VI = 5V

VCC = 50V, VI = 0V

VO = 5V, IO = 50mA

-

-

Transition frequency

fT *1

VCE = 10V, IE = 50mA,

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

Min.

-

3

-

-

-

56

7

0.8

-

Typ. Max. Unit

-

0.5

V

-

-

0.1 0.3

V

-

0.88 mA

-

0.5 A

-

-

-

10

13

k

1

1.2

-

250

-

MHz

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© 2012 ROHM Co., Ltd. All rights reserved.

2/5

2012.02 - Rev.C

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