BYG50 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYG50 Datasheet PDF : 6 Pages
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Philips Semiconductors
Controlled avalanche rectifiers
Preliminary specification
BYG50 series
SYMBOL
PARAMETER
ERSM
non-repetitive peak reverse avalanche
energy
BYG50D to J
BYG50K and M
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig.4
MIN.
−
−
−65
−65
MAX. UNIT
10 mJ
7 mJ
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
V(BR)R
IR
trr
forward voltage
reverse avalanche
breakdown voltage
BYG50D
BYG50G
BYG50J
BYG50K
BYG50M
reverse current
reverse recovery time
IF = 1 A; Tj = Tj max; see Fig.5
IF = 1 A; see Fig.5
IR = 0.1 mA
VR = VRRMmax; see Fig.6
VR = VRRMmax; Tj = 165 °C; see Fig.6
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
MIN.
−
−
300
500
700
900
1 100
−
−
−
TYP.
−
−
MAX.
0.85
1.00
UNIT
V
V
−
−V
−
−V
−
−V
−
−V
−
−V
−
1 µA
−
100
µA
2
− µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
25
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the “General Part of associated Handbook”.
1996 May 24
3
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