BUZ80A View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ80A

SIPMOS ® Power Transistor

Siemens AG 

BUZ 80A

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs

7.0 Ptot = 75W

A

6.0

l kj i h g

ID

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

VGS [V]

f a 4.0

b 4.5

c 5.0

e d 5.5

e 6.0

f 6.5

g 7.0

d

h 7.5

i

8.0

j

9.0

c k 10.0

l 20.0

b

0.5

0.0

0

a

5 10 15 20 25 30 35 V 45

VDS

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

VDS≥2 x ID x RDS(on)max

5.0

A

ID

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0 1 2 3 4 5 6 7 8 V 10

VGS

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter: VGS

10

Ω

a

b

c

d

e

RDS (on) 8

7

6

5

f

4

g

h

3

ji

k

2

VGS [V] =

1ab

4.05 5.0

0

0.0 1.0

cd

5.5 6.0

2.0

ef

6.5 7.0

3.0

ghi j k

7.5 8.0 9.0 10.0 20.0

4.0 5.0 A 6.5

ID

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs,

VDS≥2 x ID x RDS(on)max

3.0

S

gfs

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0

ID

Semiconductor Group

6

07/96

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