BTA208-800B/DG,127(2014) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BTA208-800B/DG,127 Datasheet PDF : 13 Pages
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BTA208-800B
3Q Hi-Com Triac
11 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. This "series B" triac will commutate the full rated RMS current at the maximum
rated junction temperature without the aid of a snubber.
2. Features and benefits
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High immunity to false turn-on by dV/dt
• High voltage capability
• Less sensitive gate for very high noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
3. Applications
• Electronic thermostats
• General purpose motor controls
• Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 6
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 6
Min Typ Max Unit
-
-
800 V
-
-
65
A
-
-
8
A
2
18
50
mA
2
21
50
mA
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