BTA208-800B/L01 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

BTA208-800B/L01

3Q Hi-Com Triac

NXP Semiconductors. 

NXP Semiconductors

BTA208-800B

3Q Hi-Com Triac

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VDRM

IT(RMS)

repetitive peak off-state voltage

RMS on-state current

full sine wave; Tmb ≤ 102 °C; see Figure 1;

see Figure 2; see Figure 3

ITSM

non-repetitive peak on-state

full sine wave; Tj(init) = 25 °C; tp = 20 ms;

current

see Figure 4; see Figure 5

I2t

dIT/dt

IGM

VGM

PGM

PG(AV)

Tstg

Tj

I2t for fusing

rate of rise of on-state current

peak gate current

peak gate voltage

peak gate power

average gate power

storage temperature

junction temperature

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms

tp = 10 ms; sine-wave pulse

IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs

over any 20 ms period

Min Max Unit

-

800 V

-

8

A

-

65 A

-

71 A

-

21

A2s

-

100 A/µs

-

2

A

-

5

V

-

5

W

-

0.5 W

-40 150 °C

-

125 °C

10

IT(RMS)

(A)

8

6

4

2

0

−50

0

003aaf581

102 °C

50

100

150

Tmb (°C)

25

IT(RMS)

(A)

20

15

10

5

0

10−2

10−1

003aaf617

1

10

surge duration (s)

Fig 1. RMS on-state current as a function of heatsink Fig 2. RMS on-state current as a function of surge

temperature; maximum values

duration; maximum value

BTA208-800B

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 12 April 2011

© NXP B.V. 2011. All rights reserved.

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