BTS610L1 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BTS610L1 Datasheet PDF : 12 Pages
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Electrical Characteristics
Parameter and Conditions, each channel
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
BTS 610 L1
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
IL = 1.8 A
Tj=25 °C:
each channel
Tj=150 °C:
Nominal load current, ISO Norm (pin 4 to 1 or 7)
VON = 0.5 V, TC = 85 °C
each channel:
both channels parallel:
RON
IL(ISO)
Output current (pin 1 or 7) while GND disconnected IL(GNDhigh)
or GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7
Turn-on time
IN to 90% VOUT: ton
Turn-off time
IN to 10% VOUT: toff
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
dV /dton
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
-dV/dtoff
-- 160 200 mΩ
320 400
1.8 2.3
3.5 4.4
--
--
-- A
--
10 mA
80 200 400 µs
80 200 400
0.1
--
1 V/µs
0.1
--
1 V/µs
Operating Parameters
Operating voltage5)
Tj =-40...+150°C: Vbb(on)
5.0
--
Undervoltage shutdown
Tj =-40...+150°C: Vbb(under)
3.5
--
Undervoltage restart
Tj =-40...+150°C: Vbb(u rst)
--
--
Undervoltage restart of charge pump
see diagram page 10
Vbb(ucp)
-- 5.6
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
-- 0.2
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
24
--
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
23
--
Overvoltage hysteresis
Overvoltage protection6)
Ibb=40 mA
Tj =-40...+150°C: ∆Vbb(over)
Tj =-40...+150°C: Vbb(AZ)
-- 0.5
42 47
Standby current (pin 4)
VIN=0
Tj=-40...+25°C: Ibb(off)
Tj= 150°C:
-- 14
-- 17
Leakage output current (included in Ibb(off))
VIN=0
IL(off)
--
--
Operating current (Pin 2)7), VIN=5 V
both channels on, Tj =-40...+150°C
IGND
--
4
5) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
6) See also VON(CL) in table of protection functions and circuit diagram page 7.
Semiconductor Group
3
24 V
5.0 V
5.0 V
7.0 V
-- V
34 V
-- V
-- V
-- V
30 µA
35
12 µA
6 mA
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