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S1ZB20 View Datasheet(PDF) - Electronics Industry

Part Name
Description
Manufacturer
S1ZB20
EIC
Electronics Industry EIC
S1ZB20 Datasheet PDF : 2 Pages
1 2
RATING AND CHARACTERISTIC CURVES ( S1ZB20 - S1ZB80 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
Aluminum Substrate
0.8
0.6
0.4 Glass Epoxy
Substrate
0.2
Resistive Load
00
25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
1
Pulse Width = 300 µs
1% Duty Cycle
0.1
TL = 25 °C
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PER BRIDGE ELEMENT
30
24
18
12
Ta = 40 °C
Single Half Sine-Wave
6
(JEDEC Method)
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
TJ = 125 °C
10
1.0
TJ = 25 °C
0.1
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
Rev. 02 : March 24, 2005

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