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Part Name
Description
1N5391G View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
Manufacturer
1N5391G
DO-15 Plastic-Encapsulate Diodes
Jiangsu High diode Semiconductor Co., Ltd
1N5391G Datasheet PDF : 4 Pages
1
2
3
4
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
1.5
1.
50
1.2
0
0
.
. 9
0
0
.
. 6
0.3
0
0
S
ingle Phase
Half Wave 60HZ
Resisteve or
Inductive Load
0.375''(9.5mm)
Lead Length
50
40
30
20
10
100
150
Ta
(℃)
1
2
8.3ms Single Half Sine Wave
JEDEC Method
10
20
100
Number of Cycles
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0.6
FIG.3: TYPICAL FORWARD CHARACTERISTICS
1000
100
10
1.0
TJ=25
℃
Pulse width=300us
0.1
1% Duty Cycle
0.8
1.0
0.01
0
1.2
1.4
VF(V)
FIG.4
:
TYPICAL REVERSE CHARACTERISTICS
Tj=125
℃
Tj=100
℃
Tj=25
℃
20
40
60
80
100
Voltage(%)
H
igh Diode Semiconductor
2
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