1N5817W View Datasheet(PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd
Part Name
Description
Manufacturer
1N5817W Datasheet PDF : 4 Pages
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Technical Data
Data Sheet N1756, Rev. -
1N5817W-1N5819W
SCHOTTKY BARRIER DIODE
Features:
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• Low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data:
• Case: SOD-123FL molded plastic body
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
Mechanical Dimensions: In mm/Inches
1N5817W-1N5819W
Green Products
Symbol
A
B
C
D
E
G
Millimeters
Min Max
3.55 3.85
2.60 2.90
1.75 1.95
0.90 1.40
0.70 1.20
0.25
-
Inches
Min Max
0.140
0.102
0.152
0.114
0.069 0.077
0.035 0.055
0.028 0.047
0.010
-
SOD-123FL
• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com •
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