STPS1150(2006) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS1150 Datasheet PDF : 7 Pages
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Characteristics
STPS1150
Figure 9.
Reverse leakage current versus
reverse voltage applied (typical
values)
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
25
50
75
100
125
150
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
VR(V)
1
1
10
100
1000
Figure 11. Forward voltage drop versus
Figure 12. Forward voltage drop versus
forward current - maximum values,
forward current - maximum values,
high level (SMA)
low level (DO-41)
IFM(A)
3.0
IFM(A)
100
2.5
Tj=125°C
(maximum values)
2.0
1.5
Tj=125°C
(typical values)
1.0
Tj=25°C
(maximum values)
0.5
VFM(V)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Tj=125°C
(maximum values)
Tj=125°C
10
(typical values)
Tj=25°C
(maximum values)
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Figure 13.
Thermal resistance junction to
ambient versus copper surface
under each lead - Epoxy printed
circuit board FR4, eCu = 35 µm
(SMA)
Rth(j-a)(°C/W)
130
120
110
100
90
80
70
60
50
40
30
20
10
SCu(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 14. Thermal resistance versus lead
length (DO-41)
Rth(°C/W)
120
100
Rth(j-a)
80
60
Rth(j-I)
40
20
Lleads(mm)
0
5
10
15
20
25
4/7
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