BTA416Y(2007) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BTA416Y
(Rev.:2007)
(Rev.:2007)
NXP Semiconductors.
BTA416Y Datasheet PDF : 12 Pages
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NXP Semiconductors
BTA416Y series B and C
16 A 3-quadrant triacs, insulated, high commutation, high temperature
8. Dynamic characteristics
Table 7. Dynamic characteristics
Symbol Parameter
Conditions
dVD/dt
dIcom/dt
tgt
rate of rise of
VDM = 0.67 × VDRM(max); exponential
off-state voltage waveform; gate open circuit
Tj = 125 °C
Tj = 150 °C
rate of change of VDM = 400 V; IT(RMS) = 16 A; without
commutating
snubber; gate open circuit
current
Tj = 125 °C
Tj = 150 °C
gate-controlled
turn-on time
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
BTA416Y-600B
BTA416Y-800B
BTA416Y-600C Unit
BTA416Y-800C
Min Typ Max Min Typ Max
1000 -
-
500 -
-
V/µs
600 -
-
300 -
-
V/µs
15 -
-
10 -
-
A/ms
6
-
-
4
-
-
A/ms
-
2
-
-
2
-
µs
1.6
VGT
VGT(25°C)
1.2
0.8
001aag168
3
IGT
(1)
IGT(25°C)
(2)
2
(3)
1
001aag165
0.4
−50
0
50
100
150
Tj (°C)
0
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA416Y_SER_B_C_1
Product data sheet
Rev. 01 — 3 October 2007
© NXP B.V. 2007. All rights reserved.
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