TIM1414-8L View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TIM1414-8L

MICROWAVE POWER GaAs FET

Toshiba 

TIM1414-8L

Power Dissipation(PT) vs. Case Temperature(Tc)

60

30

0

0

40

80

120

160

200

Tc( °C )

IM3 vs. Output Power Characteristics

-10

VDS=9V

-20 freq.=14.5GHz

Δf=5MHz

-30

-40

-50

-60

23

25

27

29

31

33

Pout(dBm) @Single carrier level

4

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