K1507 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
K1507 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1507
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=0; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS= 0
VSD
Diode Forward Voltage
IF=9A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=9A;RL=25Ω
toff
Turn-off time
MIN TYP MAX UNIT
600
V
2.5
3.5
5.0
V
0.85 1.0
Ω
±100 nA
500
uA
1.1
1.5
V
30
45
ns
80
120
ns
80
120
ns
160 240
ns
isc website：www.iscsemi.cn
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