2SA1962 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SA1962 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA1962
ELECTRICAL CHARACTERISTICS
Tc-25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-50mA; IB= 0
-230
V
VcE(sat) Collector-Emitter Saturation Voltage lc= -8A; IB= -0.8A
VsE(on)
Base-Emitter On Voltage
lc= -7A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -230V ; IE= 0
-3.0 V
-1.5 V
-5
uA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-5
uA
hpE-1
DC Current Gain
lc=-1A;VCE=-5V
55
160
hFE-2
DC Current Gain
lc= -7A ; VCE= -5V
35
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
360
PF
fr
Current-Gain—Bandwidth Product
lc=-1A;VCE=-5V
30
MHz
• hpE-1 Classifications
R
0
55-110
80-160
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