J211_D74Z View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
J211_D74Z Datasheet PDF : 9 Pages
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Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
VGS
IGF
TJ, TSTG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
V
-25
V
10
mA
-55 to 150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
J211(3)
MMBFJ211(3)
Unit
Total Device Dissipation
PD
Derate Above 25°C
350
225
mW
2.8
1.8
mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
125
°C/W
357
556
°C/W
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0
IGSS
Gate Reverse Current
VGS = 15 V, VDS = 0
VGS(off) Gate-Source Cut-Off Voltage
VDS = 15 V, ID = 1.0 nA
On Characteristics
IDSS
Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0
Small Signal Characteristics
gfs
Common Source Forward
Transconductance
VDS = 15 V, VGS = 0,
f = 1.0 kHz
goss
Common Source Output
Conductance
VDS = 15 V, VGS = 0,
f = 1.0 kHz
Note:
4. Pulse test: pulse width ≤ 300 μs
Min.
-25
-2.5
7.0
7000
Max.
-100
-4.5
20
Unit
V
pA
V
mA
12000
200
μmhos
μmhos
© 1997 Fairchild Semiconductor Corporation
J211 / MMBFJ211 Rev. 1.4
2
www.fairchildsemi.com
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